COAXIAL CARBON NANOTUBE CAPACITOR FOR eDRAM
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United States of America Patent
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May 24, 2016
Grant Date -
Jun 9, 2016
app pub date -
Dec 9, 2014
filing date -
Dec 9, 2014
priority date (Note) -
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Abstract
A deep trench (DT) opening is provided in a semiconductor substrate and then conducting carbon nanotubes are formed within the DT. Each conducting carbon nanotube is coated with a high k dielectric material and thereafter the remaining volume of the DT is filled with a conductive material.
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