Semiconductor graphene structures, semiconductor devices including such structures, and related methods
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United States of America Patent
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May 24, 2016
Grant Date -
Feb 5, 2015
app pub date -
Oct 22, 2014
filing date -
Jul 30, 2013
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Abstract
A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material.
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