Method for fabricating semiconductor device

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United States of America Patent

PATENT NO 9349813
APP PUB NO 20120220115A1
SERIAL NO

13330057

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Abstract

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A method for fabricating a semiconductor device includes forming at least two gate patterns on a substrate, forming sidewalls surrounding the gate patterns, wherein the sidewalls extend above an upper surface of the gate patterns, and forming a first conducting material in a first space and a second space, wherein the first space is provided above the gate patterns and between the sidewalls that extend above the upper surface of the gate patterns and the second space is provided between the gate patterns.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Sul Hwan Icheon-si, KR 1 0

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