Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure

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United States of America Patent

PATENT NO 9349821
APP PUB NO 20160071946A1
SERIAL NO

14940785

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Abstract

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An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Bong-hyun Incheon, KR 25 101
Kim, Joon Seoul, KR 48 356
Lee, Dong-Kak Seoul, KR 11 440
Lim, Han-Jin Seoul, KR 51 397

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