Plasma etching apparatus component and manufacturing method for the same

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United States of America Patent

PATENT NO 9355855
APP PUB NO 20130251949A1
SERIAL NO

13989092

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Abstract

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The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 μm or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA;TOSHIBA MATERIALS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hino, Takashi Yokohama, JP 63 545
Nakatani, Masashi Kamakura, JP 9 72
Rokutanda, Takashi Yokohama, JP 16 136
Sato, Michio Yokohama, JP 60 2777

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