Silicon nitride etching in a single wafer apparatus
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United States of America Patent
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May 31, 2016
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Mar 28, 2013
app pub date -
Sep 24, 2011
filing date -
Sep 24, 2011
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Abstract
A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.
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