Structure and method of integrating waveguides, photodetectors and logic devices
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United States of America Patent
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May 31, 2016
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Jun 16, 2015
filing date -
Jun 16, 2015
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Abstract
A method for monolithically integrating semiconductor waveguides, photodetectors and logic devices, i.e., field effect transistors, on a same substrate is provided. The method includes the use of a double semiconductor-on-insulator substrate that includes from bottom to top, a handle substrate, a first insulator layer, a first semiconductor material layer, a second insulator layer, and a second semiconductor material layer. The waveguides, photodetectors and logic devices can be formed in different regions of the substrate and are present atop a first insulator layer of the double semiconductor-on-insulator substrate.
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