Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template
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United States of America Patent
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Jun 7, 2016
Grant Date -
Sep 26, 2013
app pub date -
Mar 11, 2013
filing date -
Mar 21, 2012
priority date (Note) -
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Abstract
A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.
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