Nanowire semiconductor device
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United States of America Patent
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Jun 7, 2016
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N/A
app pub date -
Dec 10, 2015
filing date -
Sep 22, 2015
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Abstract
A method for forming a nanowire device comprises forming a fin on a substrate, depositing a first layer of insulator material on the substrate, etching to remove portions of the first layer of insulator material to reduce a thickness of the first layer of insulator material, epitaxially growing a first layer of semiconductor material on exposed sidewall portions of the fin, depositing a second layer of insulator material on the first layer of insulator material, etching to remove portions of the second layer of insulator material to reduce a thickness of the second layer of insulator material, and etching to remove portions of the first layer of semiconductor material to expose portions of the fin and form a first nanowire and a second nanowire.
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