Semiconductor device, method for manufacturing the same, circuit substrate, electro-optical apparatus, and electronic equipment

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United States of America Patent

PATENT NO 9362246
APP PUB NO 20150279801A1
SERIAL NO

14740603

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Abstract

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A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

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Patent Owner(s)

Patent OwnerAddress
SEIKO EPSON CORPORATIONTOKYO 160-8801

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Haruki Chino, JP 60 896

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