Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same
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United States of America Patent
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Jun 7, 2016
Grant Date -
May 28, 2015
app pub date -
Dec 29, 2014
filing date -
Jun 27, 2013
priority date (Note) -
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Abstract
Integrated circuits are provided. An exemplary integrated circuit includes a source/drain region in a semiconductor substrate. The integrated circuit includes a charge storage structure overlying the semiconductor substrate and having a first sidewall overlying the source/drain region. The integrated circuit also includes a control gate overlying the source/drain region. Further, the integrated circuit includes a first select gate overlying the semiconductor substrate and adjacent the first sidewall. A first memory cell is formed by the control gate and the first select gate.
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