Semiconductor device
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United States of America Patent
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Jun 7, 2016
Grant Date -
Sep 17, 2015
app pub date -
Jul 10, 2014
filing date -
Mar 13, 2014
priority date (Note) -
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Abstract
A semiconductor device in an embodiment includes a first region of a second conductivity type between a first electrode and a second electrode and a second region of a first conductivity type between the first region and the second electrode. a third region of the second conductivity type is between the second region and the second electrode. A fourth and fifth region of the first conductivity type are between the third semiconductor region and the second electrode. The fourth and fifth regions are adjacent to each other. A dopant concentration in the fifth region is less than a dopant concentration in the fourth region. A third electrode contacts the second region, the third region, the fourth region, and the fifth region via an insulating film.
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