Confined resistance variable memory cells and methods

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United States of America Patent

PATENT NO 9362495
APP PUB NO 20140151629A1
SERIAL NO

14083069

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Abstract

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Methods, devices, and systems associated with resistance variable memory device structures can include a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material contacts a bottom electrode and a second unmodified portion of the resistance variable material contacts a top electrode.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT633 WEST FIFTH STREET 24TH FLOOR LOS ANGELES CA 90071

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bian, Zailong Boise, US 26 595

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