Etching solution for copper/molybdenum-based multilayer thin film
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United States of America Patent
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Jun 14, 2016
Grant Date -
Jun 12, 2014
app pub date -
Jul 25, 2012
filing date -
Jul 26, 2011
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Abstract
The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.
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