Memory device with resistance-change type storage elements
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United States of America Patent
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Jun 14, 2016
Grant Date -
Sep 17, 2015
app pub date -
Sep 10, 2014
filing date -
Mar 14, 2014
priority date (Note) -
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Abstract
According to one embodiment, a memory device includes memory cells including storage elements, each storing information based on a change of resistance, word lines, first bit lines, second bit lines, column selection transistors connected to the first bit lines, and precharge transistors connected to the first bit lines. At least two of the precharge transistors are selected by a common control signal and apply a precharge voltage to at least two of the corresponding first bit lines before writing information to a selected memory cell, and the precharge voltage is the same as a voltage to be applied to at least two of the second bit lines paired with the at least two of the first bit lines.
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