Non-volatile latch using magneto-electric and ferro-electric tunnel junctions

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United States of America Patent

PATENT NO 9368208
SERIAL NO

14690923

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Abstract

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A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an internal state of the SRAM cell. In other implementations, the magnetoelectric and ferroelectric structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.

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Patent Owner(s)

Patent OwnerAddress
THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK35 STATE STREET ALBANY NY 12207

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bird, Jonathan P Buffalo, US 4 82
Marshall, Andrew Dallas, US 127 1668
Nikonov, Dmitri E Beaverton, US 125 1577
Singisetti, Uttam East Amherst, US 1 8

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