Semiconductor memory device having a memory string that includes a transistor having a charge stored therein to indicate the memory string is defective
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United States of America Patent
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Jun 14, 2016
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app pub date -
Jan 14, 2015
filing date -
Sep 21, 2012
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Abstract
A semiconductor memory device includes a memory string having first and second selective transistors, each of which includes a charge storage layer and a control gate, a back gate transistor which includes a charge storage layer and a control gate, and memory cell transistors connected to each other and to the back gate transistor in series between the first and second selective transistors. In case any of the memory cell transistors is defective, the defect is indicated by storing a charge in the charge storage layer of at least one of the first and second selective transistors and the back gate transistor.
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