Field effect transistor with narrow bandgap source and drain regions and method of fabrication

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United States of America Patent

PATENT NO 9368583
SERIAL NO

14702608

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Abstract

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A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brask, Justin K Portland, US 253 8518
Chau, Robert S Beaverton, US 514 18995
Datta, Suman Beaverton, US 256 10425
Doczy, Mark L Portland, US 209 5761
Kavalieros, Jack Portland, US 270 9074
Metz, Matthew Portland, US 78 815

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