Trench gate FET with self-aligned source contact

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 9368620
SERIAL NO

14473327

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Abstract

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A semiconductor device includes a substrate and a semiconductor layer having a first conductivity type. The semiconductor device further includes first and second trenches extending into the semiconductor layer from a surface of the semiconductor layer, each of the first and second trenches including a corresponding gate electrode. The semiconductor device further includes a body region having a second conductivity type different than the first conductivity type and a source contact region having the first conductivity type. The body region is disposed in the semiconductor layer below the surface of the semiconductor layer and between a sidewall of the first trench and an adjacent sidewall of a second trench. The source contact region is disposed in the semiconductor layer between the body region and the surface of the semiconductor layer and extending between the sidewall of the first trench and the corresponding sidewall of the second trench.

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Patent Owner(s)

  • FREESCALE SEMICONDUCTOR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
de, Frésart Edouard Tempe, US 5 47
Ku, Pon Sung Gilbert, US 11 81
Petras, Michael Phoenix, US 14 163
Qin, Ganming Chandler, US 29 126
Zitouni, Moaniss Gilbert, US 32 167
Zupac, Dragan Chandler, US 9 53

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