Compositions for etching
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United States of America Patent
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Jun 14, 2016
Issued Date -
N/A
app pub date -
Aug 12, 2015
filing date -
Oct 18, 2011
priority date (Note) -
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Abstract
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
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