Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems

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United States of America Patent

PATENT NO 9368714
SERIAL NO

13932497

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Abstract

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A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kula, Witold Gilroy, US 103 3059
Sandhu, Gurtej S Boise, US 1217 32397

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