Methods and apparatuses to form self-aligned caps

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United States of America Patent

PATENT NO 9373584
SERIAL NO

13991899

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Abstract

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At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Boyanov, Boyan Portland, US 99 1524
Singh, Kanwal Jit Hillsboro, US 26 312

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