Variable resistance nonvolatile memory element writing method and variable resistance nonvolatile memory device
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United States of America Patent
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Jun 28, 2016
Grant Date -
Jul 25, 2013
app pub date -
Mar 22, 2012
filing date -
Mar 25, 2011
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Abstract
A variable resistance nonvolatile memory element writing method of, by applying a voltage pulse to a memory cell including a variable resistance element, reversibly changing the variable resistance element between a first resistance state and a second resistance state according to a polarity of the applied voltage pulse is provided. The variable resistance nonvolatile memory element writing method includes applying a first preliminary voltage pulse and subsequently applying the first voltage pulse to the variable resistance element to change the variable resistance element from the second resistance state to the first resistance state, the first preliminary voltage pulse being smaller in voltage absolute value than the second threshold voltage and different in polarity from the first voltage pulse.
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