Metal PVD-free conducting structures

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United States of America Patent

PATENT NO 9379008
SERIAL NO

14627252

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Abstract

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Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).

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Patent Owner(s)

Patent OwnerAddress
INVENSAS CORPORATION3025 ORCHARD PARKWAY SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Caskey, Terrence Santa Cruz, US 43 940
Monadgemi, Pezhman Fremont, US 43 1086
Newman, Michael Fort Collins, US 67 1722
Uzoh, Cyprian Emeka San Jose, US 330 9256
Woychik, Charles G San Jose, US 106 2139

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