Amorphous oxide semiconductor thin film transistor fabrication method

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United States of America Patent

PATENT NO 9379254
APP PUB NO 20130127694A1
SERIAL NO

13299780

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This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.

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Patent Owner(s)

  • SNAPTRACK, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Tallis Young San Diego, US 35 174
Hong, John Hyunchul San Clemente, US 53 386
Kim, Cheonhong San Diego, US 55 285

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