Lanthanum target for sputtering
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United States of America Patent
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Jul 5, 2016
Grant Date -
Dec 22, 2011
app pub date -
Mar 17, 2010
filing date -
Mar 31, 2009
priority date (Note) -
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Abstract
Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same.
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