Film formation method using oscillators for measurement and calibration during calibration step performed during film formation
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United States of America Patent
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Jul 5, 2016
Grant Date -
Jun 25, 2015
app pub date -
Mar 2, 2015
filing date -
Nov 4, 2010
priority date (Note) -
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Abstract
A film formation method controls with accuracy the thickness of a thin film formed on a film formation object. The film formation method includes a film formation step of heating a film formation source and forming a film on a film formation object while moving the film formation source and monitoring an amount of released vapors of the film forming material using a quartz oscillator for measurement, a control step of adjusting a heating temperature of the film formation source based on the monitored value of the quartz oscillator for measurement, and a calibration step of calibrating the monitored value of the quartz oscillator for measurement, using a quartz oscillator for calibration and the quartz oscillator for measurement. The calibration step is performed in a middle of the film formation step, after movement of the film formation source is started from a waiting position.
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