Residue free systems and methods for isotropically etching silicon in tight spaces

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9385003
SERIAL NO

14623144

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Del, Puppo Helene Fremont, US 5 237
Kamarthy, Gowri Pleasanton, US 20 882
Kuo, Ming-Shu San Ramon, US 8 17
Upadhyaya, Ganesh Pleasanton, US 10 343
Zhong, Qinghua Fremont, US 43 842

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jan 5, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jan 5, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00