STI region for small fin pitch in FinFET devices

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United States of America Patent

PATENT NO 9385123
APP PUB NO 20150340272A1
SERIAL NO

14281931

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Abstract

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The present invention relates generally to semiconductor devices, and particularly to fabricating a shallow trench isolation (STI) region in fin field effect transistors (FinFETs) having a small fin pitch. According to one embodiment, a method of using selective etching techniques to remove a single fin to form a fin trench and to form an isolation trench having a width approximately equal to a width of the single fin below the removed fin is disclosed. The fin trench and the isolation trench may be filled with isolation material to form an isolation region.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsueh-Chung Cohoes, US 165 1089
Fan, Su Chen Cohoes, US 134 700
Tseng, Chiahsun Wynantskil, US 64 383
Yeh, Chun-Chen Clifton Park, US 417 3455

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