Semiconductor device
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United States of America Patent
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-
Jul 5, 2016
Grant Date -
Nov 12, 2015
app pub date -
Jul 21, 2015
filing date -
Mar 25, 2013
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device including a first conductor layer, a second conductor layer formed over the first conductor layer, a third conductor layer formed over the second conductor layer, a gate trench which passes through the third conductor layer and is formed in the second conductor layer, a first insulating film formed on an inner wall of the gate trench, a second insulating film formed on the inner wall of the gate trench, a first buried conductor layer formed in the gate trench, a gate electrode formed in the gate trench, a fourth conductor layer of the second conductivity type formed on a lower end of the first buried conductor layer and a lower end of the gate trench, and a fifth conduction layer of the first conductivity type formed over the third conductor layer. The first insulating film is thicker than the second insulating film.
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