Substrate processing apparatus and substrate processing method
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United States of America Patent
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Jul 12, 2016
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app pub date -
Dec 21, 2012
filing date -
Dec 23, 2011
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Abstract
Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.
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