Method for manufacturing polycrystalline silicon ingot, and polycrystalline silicon ingot

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United States of America Patent

PATENT NO 9388507
APP PUB NO 20130008371A1
SERIAL NO

13637054

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Abstract

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A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X<30 mm), a second zone from X to Y in height (30 mm≦Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h≦V1≦20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h≦V2≦5 mm/h.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO LTDAKITA-SHI AKITA 010-8585

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Hiroshi Akita, JP 368 4841
Kanai, Masahiro Akita, JP 212 4670
Tsuzukihashi, Koji Akita, JP 4 12
Wakita, Saburo Noda, JP 24 305

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