Method for manufacturing SiC substrate

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United States of America Patent

PATENT NO 9390924
APP PUB NO 20150318174A1
SERIAL NO

14650596

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Abstract

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A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.

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Patent Owner(s)

  • SHOWA DENKO K.K.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Yuzo Hikone, JP 30 201

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