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Abstract

A method for incorporating radicals of a plasma into a substrate or a material on a semiconductor substrate using a remote plasma source. In one embodiment, a method for processing doped materials on a substrate surface is provided and includes forming a doped layer on a substrate and optionally cleaning the doped layer, such as by a wet clean process. The method also includes generating an ionized nitrogen plasma in a remote plasma source, wherein the ionized nitrogen plasma has an ion concentration within a range from about 0.001% to about 0.1%, de-ionizing the ionized nitrogen plasma while forming non-ionized nitrogen plasma. The method further includes flowing the non-ionized nitrogen plasma into a processing region within a processing chamber, forming a nitrided capping layer from an upper portion of the doped layer by exposing the doped layer within the processing region to the non-ionized nitrogen plasma during a stabilization process.

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First Claim