Method of manufacturing semiconductor device

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United States of America

PATENT NO 9390960
SERIAL NO

13690418

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Abstract

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A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

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Patent Owner(s)

  • FUJITSU SEMICONDUCTOR LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hori, Mitsuaki Kuwana, JP 28 207
Kawamura, Hiroe Inabe, JP 3 5
Nishigaya, Keita Kuwana, JP 1 0
Tamura, Naoyoshi Yokohama, JP 58 810

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