MIM capacitor with enhanced capacitance formed by selective epitaxy
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United States of America Patent
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Jul 12, 2016
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N/A
app pub date -
Dec 3, 2015
filing date -
Dec 3, 2015
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Abstract
An on-chip capacitor with enhanced capacitance and a method of forming the same are provided. An epitaxial process is employed to selectively form semiconductor material nodules on portions of a semiconductor material nodule nucleation layer that is present atop a semiconductor substrate. The semiconductor material nodules have an increased surface area for forming a capacitor structure thereon. A metal-insulator-metal capacitor structure is then formed surrounding each semiconductor material nodule. The resultant semiconductor structure (i.e., on-chip capacitor) has enhanced capacitance without increasing the size of the chip or the fabrication cost.
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