Semiconductor device
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United States of America Patent
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Jul 12, 2016
Grant Date -
Mar 17, 2016
app pub date -
Feb 27, 2015
filing date -
Sep 12, 2014
priority date (Note) -
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Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the first conductivity type provided on the third semiconductor region and the fourth semiconductor region, and a sixth semiconductor region of the second conductivity type. The third semiconductor region is provided on the first semiconductor region and has a dopant concentration that is lower than a dopant concentration of the first semiconductor region. The fourth semiconductor region is provided on the second semiconductor region adjacent to the third semiconductor region. A dopant contained in the fourth semiconductor region extends to a level that is deeper than a level of a dopant contained in the third semiconductor region.
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