Thin film transistor and manufacturing method thereof and display comprising the same
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United States of America Patent
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Jul 12, 2016
Grant Date -
Dec 4, 2014
app pub date -
Feb 19, 2014
filing date -
May 31, 2013
priority date (Note) -
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Abstract
Provided is a TFT with an improved gate insulator, having an insulator substrate, a gate layer, a gate insulator layer, a active semiconductor layer, and a source and drain electrode layer, wherein the gate insulator layer includes a first silicon nitride film, a second silicon nitride film disposed on the first silicon nitride film and a third silicon nitride film disposed on the second silicon nitride, and compared to the second silicon nitride film, each of the first silicon nitride film and the third silicon nitride film is much thinner and has a lower content of N—H bond. Also provided is a display including said TFTs. According to the present disclosure, an improved gate insulator layer capable of withstanding higher voltage can be achieved due to the laminated structure and accordingly a TFT with excellent reliability can be formed.
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