Three-dimensional field-effect transistor on bulk silicon substrate
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United States of America Patent
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Jul 12, 2016
Grant Date -
Feb 26, 2015
app pub date -
Aug 22, 2013
filing date -
Aug 22, 2013
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Abstract
A field-effect transistor (FET) on bulk substrate and a method of fabricating the same is discussed herein. The FET includes a dielectric layer disposed on the bulk substrate and a fin structure and a gate structure disposed on the dielectric layer. The dielectric layer includes alternating first and second dielectric regions. The fin structure includes a channel region interposed between a source region and a drain region. The gate structure is capacitively coupled to the fin structure and positioned between the source region and the drain region. Improved performance characteristics of FET is primarily achieved with the dielectric layer providing electrical isolation of the fin structure from the bulk substrate.
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