Nanomagnetic devices switched with a spin hall effect

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United States of America Patent

PATENT NO 9391262
SERIAL NO

14139528

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Abstract

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Described are Spin Hall Magnetic Random Access Memory (MRAM) cells and arrays. In one embodiment, an apparatus includes a nanomagnet having a cross-sectional area and a spin Hall effect (SHE) material. The SHE material is coupled to a subset of the cross-sectional area of the nanomagnet.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Manipatruni, Sasikanth Hillsboro, US 348 2523
Nikonov, Dmitri E Beaverton, US 125 1577
Young, Ian A Portland, US 198 2436

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