Integrated etch/clean for dielectric etch applications
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United States of America Patent
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Jul 19, 2016
Grant Date -
Jun 23, 2016
app pub date -
Feb 2, 2015
filing date -
Feb 2, 2015
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Abstract
The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.
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