Integrated inductor and magnetic random access memory device
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United States of America Patent
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Jul 19, 2016
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app pub date -
Sep 23, 2015
filing date -
Sep 23, 2015
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Abstract
Devices and methods of forming a device are disclosed. The method includes providing a substrate defined with at least first and second regions. A first upper dielectric layer is provided over the substrate. The first upper dielectric layer comprises a first upper interconnect level with a plurality of metal lines. A dielectric layer is formed over the first upper dielectric layer. The dielectric layer includes a second upper interconnect level with a plurality of metal lines. A magnetic random access memory (MRAM) cell is formed between the first and second upper interconnect levels in the first region. An inductor is formed in the second region. The inductor includes a lower inductor level formed from metal lines in the first upper interconnect level and an upper inductor level formed from metal lines in the second upper interconnect level. The metal lines in the lower inductor level and upper inductor level are coupled by via contacts to form loops of the inductor.
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