Semiconductor device and manufacturing method for the same

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United States of America Patent

PATENT NO 9397171
APP PUB NO 20150243741A1
SERIAL NO

14628877

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Abstract

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A semiconductor device according to the invention includes an epitaxial layer of a first conductivity type, a first well of a second conductivity type to which a first potential is applied, a second well of the second conductivity type to which a second potential that differs from the first potential is applied, a third well of the first conductivity type provided in the epitaxial layer between the first well and the second well, a first impurity region of the first conductivity type provided in the epitaxial layer under the first well, a first MOS transistor provided in the first well, a second MOS transistor provided in the second well, and a third MOS transistor provided in the third well, the first impurity region having a higher impurity concentration than the epitaxial layer.

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Patent Owner(s)

Patent OwnerAddress
SEIKO EPSON CORPORATION1-6 SHINJUKU 4-CHOME SHINJUKU-KU TOKYO 160-8801

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Furuhata, Tomoyuki Suwa, JP 37 304

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