Diffusion-controlled oxygen depletion of semiconductor contact interface
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United States of America Patent
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Jul 19, 2016
Grant Date -
Sep 24, 2015
app pub date -
Mar 19, 2014
filing date -
Mar 19, 2014
priority date (Note) -
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Abstract
A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.
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