Forming air gaps in memory arrays and memory arrays with air gaps thus formed

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United States of America Patent

PATENT NO 9397210
APP PUB NO 20140027832A1
SERIAL NO

14043943

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A memory array has first and second memory cells over a semiconductor and an isolation region extending into the semiconductor. The isolation region includes an air gap between charge-storage structures of the first and second memory cells and a thickness of dielectric over the air gap and contained between the first and second memory cells.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haller, Gordon Boise, US 47 699
Hopkins, John Boise, US 77 979
Mathew, James Boise, US 25 306
Sapra, Sanjeev Boise, US 34 174
Shamanna, Vinayak K Boise, US 3 18
Weimer, Ronald A Boise, US 113 2626

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