Magnetic tunnel junction with post-deposition hydrogenation
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United States of America Patent
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Jul 19, 2016
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N/A
app pub date -
Dec 29, 2015
filing date -
Dec 29, 2015
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Abstract
According to an embodiment of the invention, a method of making a magnetic random access memory device includes: forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction; depositing an interlayer dielectric layer on the encapsulating layer disposed on the magnetic tunnel junction; annealing the magnetic tunnel junction; and implanting hydrogen in a portion of the magnetic tunnel junction. According to another embodiment of the invention, implanting of hydrogen in a portion of the magnetic tunnel junction occurs after forming a magnetic tunnel junction trench. An MRAM device with hydrogen atoms incorporated in a portion of the magnetic tunnel junction is also disclosed.
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