Transistor gate and process for making transistor gate

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9401279
APP PUB NO 20140367804A1
SERIAL NO

13918648

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Abstract

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A transistor gate is formed of a stack of layers including a polysilicon layer and a tungsten layer separated by a barrier layer. A titanium layer reduces interface resistance. A tungsten liner reduces sheet resistance. The tungsten liner, a tungsten nitride barrier layer, and the tungsten layer may be formed sequentially in the same chamber.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takeguchi, Naoki Yokkaichi, JP 36 601

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