Transistor gate and process for making transistor gate

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9401279
APP PUB NO 20140367804A1
SERIAL NO

13918648

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Abstract

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A transistor gate is formed of a stack of layers including a polysilicon layer and a tungsten layer separated by a barrier layer. A titanium layer reduces interface resistance. A tungsten liner reduces sheet resistance. The tungsten liner, a tungsten nitride barrier layer, and the tungsten layer may be formed sequentially in the same chamber.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SANDISK TECHNOLOGIES LLCPLANO, TX4280

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takeguchi, Naoki Yokkaichi, JP 19 76

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5518958 Prevention of agglomeration and inversion in a semiconductor polycide process 48 1994
2001/0054,729 Gate prespacers for high density, high performance drams 10 2001
 
NANYA TECHNOLOGY CORPORATION (2)
2005/0124,127 Method for manufacturing gate structure for use in semiconductor device 7 2003
2005/0074,957 Methods for manufacturing stacked gate structure and field effect transistor povided with the same 4 2004
 
MICRON TECHNOLOGY, INC. (13)
6551878 Mini flash process and circuit 50 2001
6688584 Compound structure for reduced contact resistance 9 2001
6514842 Low resistance gate flash memory 52 2001
* 2003/0043,637 Flash memory with low tunnel barrier interpoly insulators 35 2001
2004/0207,030 Conductive transistor structure for a semiconductor device and method for forming same 9 2003
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers 25 2003
2004/0219,746 Systems and methods for forming metal oxide layers 43 2003
6875679 Etch stop layer in poly-metal structures 10 2003
6911381 Boron incorporated diffusion barrier material 20 2003
6943416 Method and structure for reducing resistance of a semiconductor device feature 12 2003
2005/0110,058 Method and structure for reducing resistance of a semiconductor device feature 3 2003
2006/0197,225 Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines 7 2005
2009/0149,033 SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS 35 2009
 
GLOBALFOUNDRIES INC. (1)
5796166 Tasin oxygen diffusion barrier in multilayer structures 86 1996
 
SAMSUNG ELECTRONICS CO., LTD. (7)
6376325 Method for fabricating a ferroelectric device 24 2000
6555865 Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same 50 2001
2006/0180,875 Ohmic layer, semiconductor device including an ohmic layer, method of forming an ohmic layer and method of forming a semiconductor device including an ohmic layer 5 2006
2007/0034,964 Dual gate structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method 8 2006
2007/0001,241 Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same 24 2006
7582924 Semiconductor devices having polymetal gate electrodes 2 2006
2006/0244,084 Semiconductor devices having polymetal gate electrodes and methods of manufacturing the same 9 2006
 
HOYA CORPORATION (1)
5942356 Phase shift mask and phase shift mask blank 25 1997
 
ROUND ROCK RESEARCH, LLC (4)
5925918 Gate stack with improved sidewall integrity 91 1997
5998290 Method to protect gate stack material during source/drain reoxidation 51 1998
6075274 Semiconductor devices having gate stack with improved sidewall integrity 55 1999
6744108 Doped silicon diffusion barrier region 10 2000
 
SANDISK TECHNOLOGIES LLC (1)
5887145 Removable mother/daughter peripheral card 273 1997
 
MONTEREY RESEARCH, LLC (1)
6902993 Gate electrode for MOS transistors 7 2003
 
UNITED MICROELECTRONICS CORP. (1)
6208003 Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film 8 1998
 
PS4 LUXCO S.A.R.L. (2)
6800543 Semiconductor device having a low-resistance gate electrode 12 2002
2003/0170,942 Semiconductor device having a low-resistance gate electrode 3 2002
 
RENESAS ELECTRONICS CORPORATION (1)
2002/0011,636 Semiconductor device, manufacturing method thereof, and CMOS transistor 5 2001
 
TEXAS INSTRUMENTS INCORPORATED (1)
5796151 Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes 69 1996
 
KABUSHIKI KAISHA TOSHIBA (2)
5719410 Semiconductor device wiring or electrode 109 1996
2005/0212,036 Semiconductor memory device and method of manufacturing the same 2 2005
 
HYNIX SEMICONDUCTOR INC. (6)
2002/0072,156 Method of forming gate electrode in semiconductor devices 11 2001
2006/0024,894 Capacitor in semiconductor device and method for fabricating the same 3 2005
2007/0001,246 Gate electrode with double diffusion barrier and fabrication method of semiconductor device including the same 9 2005
2007/0066,013 Method for fabricating semiconductor device 8 2006
7902614 Semiconductor device with gate stack structure 1 2007
* 2008/0157,383 SEMICONDUCTOR DEVICE WITH GATE STACK STRUCTURE 4 2007
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
6107171 Method to manufacture metal gate of integrated circuits 16 1998
 
SEMICONDUCTOR PATENT CORPORATION (1)
2006/0284,264 Semiconductor device and manufacturing method thereof 6 2006
 
LAPIS SEMICONDUCTOR CO., LTD. (1)
2004/0195,603 Ferroelectric capacitor and semiconductor device having a ferroelectric capacitor 3 2004
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
6333250 Method of forming gate electrode in semiconductor device 10 1999
 
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (2)
6271590 Graded layer for use in semiconductor circuits and method for making same 11 1998
6306743 Method for forming a gate electrode on a semiconductor substrate 39 2001
* Cited By Examiner

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