Semiconductor device and method of forming the same

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United States of America Patent

PATENT NO 9401414
APP PUB NO 20150072487A1
SERIAL NO

14547068

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Abstract

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A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in the substrate adjacent to the NMOS gate structure. The method also includes forming a lightly doped source/drain (LDD) region in the amorphized region. The method further includes depositing a stress film over the NMOS gate structure, performing an annealing process, and removing the stress film.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Ziwei Baoshan Township, TW 191 2939
Wang, Tsan-Chun Hsin-Chu, TW 74 1004

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