VTFT with a top-gate structure
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United States of America Patent
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Jul 26, 2016
Grant Date -
N/A
app pub date -
Jun 12, 2015
filing date -
Jun 12, 2015
priority date (Note) -
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Abstract
An electronic device includes a vertical-support-element on a substrate. The vertical-support-element extends away from the substrate and includes a first edge having a first reentrant profile. A conformal semiconductor layer is in contact with the vertical-support-element in the reentrant profile. A first electrode is in contact with a first portion of the semiconductor layer and is located over a top of the vertical-support-element. A second electrode is in contact with a second portion of the semiconductor layer and is located over the substrate and not over the vertical-support-element. The second electrode is adjacent to the first edge of the vertical-support-element. A conformal dielectric layer is on the conformal semiconductor layer in the reentrant profile. A conformal conductive gate is on the conformal dielectric layer in the first reentrant profile. The first electrode and the second electrode define a semiconductor channel of a transistor.
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