Resistive random access memory with non-linear current-voltage relationship

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United States of America Patent

PATENT NO 9406379
APP PUB NO 20140185358A1
SERIAL NO

13733843

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Abstract

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Providing for fabrication, construction, and/or assembly of a resistive random access memory (RRAM) cell is described herein. The RRAM cell can exhibit a non-linear current-voltage relationship. When arranged in a memory array architecture, these cells can significantly mitigate sneak path issues associated with conventional RRAM arrays.

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Patent Owner(s)

Patent OwnerAddress
INNOSTAR SEMICONDUCTOR (SHANGHAI) CO LTDROOM 304 BUILDING 13 NO 1211 HONGYIN ROAD LINGANG NEW AREA CHINA (SHANGHAI) PILOT FREE TRADE ZONE SHANGHAI 201306

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jo, Sung Hyun Sunnyvale, US 125 2909
Kim, Kuk-Hwan San Jose, US 117 2141

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